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Proceedings Paper

Advanced edge roughness measurement application for mask metrology
Author(s): Thomas Marschner; Jan Richter; Uwe Dersch; Amit Moran; Ruthy Katz; David Chase; Reuven Falah; Thomas Coleman
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Paper Abstract

With decreasing Critical Dimensions (CD), the negative influence of line edge roughness (LER) and line-width roughness (LWR) on CD uniformity and mean-to-target CD becomes more pronounced, since there is no corresponding reduction of roughness with dimension reduction. This applies to wafer metrology as well as to mask metrology. In order to better understand the types of roughness as well as the impact of the CD-SEM roughness measurement capabilities on the control of the mask process, the sensitivity and accuracy of the roughness analysis were qualified by comparing the measured mask roughness to the design for a dedicated LER test mask. This comparison is done for different LER amplitude and periodicity values and for reference structures without nominal LER using the built-in CD-SEM algorithms for LER characterization.

Paper Details

Date Published: 5 April 2007
PDF: 11 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181R (5 April 2007); doi: 10.1117/12.712530
Show Author Affiliations
Thomas Marschner, Advanced Mask Technology Ctr. (Germany)
Jan Richter, Advanced Mask Technology Ctr. (Germany)
Uwe Dersch, Advanced Mask Technology Ctr. (Germany)
Amit Moran, Applied Materials Israel (Israel)
Ruthy Katz, Applied Materials Israel (Israel)
David Chase, Applied Materials Israel (Israel)
Reuven Falah, Applied Materials Israel (Israel)
Thomas Coleman, Applied Materials Israel (Israel)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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