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Proceedings Paper

Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects
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Paper Abstract

193-nm immersion lithography is the only choice for the 45-nm logical node at 120-nm half pitch and extendable to 32- and 22-nm nodes. The defect problem is one of the critical issues in immersion technology. In this paper, we provided a methodology to trace the defect source from optical microscope images to its SEM counterparts after exposure. An optimized exposure routing was also proposed to reduce printing defects. The average defect count was reduced from 19.7 to 4.8 ea/wafer.

Paper Details

Date Published: 26 March 2007
PDF: 7 pages
Proc. SPIE 6520, Optical Microlithography XX, 652012 (26 March 2007); doi: 10.1117/12.712527
Show Author Affiliations
Lin-Hung Shiu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Fu-Jye Liang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hsing Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Li-Jui Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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