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Proceedings Paper

Experimental and simulation investigations of acoustic cavitation in megasonic cleaning
Author(s): Krishna Muralidharan; Manish Keswani; Hrishikesh Shende; Pierre Deymier; Srini Raghavan; Florence Eschbach; Archita Sengupta
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Paper Abstract

Extreme ultra-violet (EUV) lithography has become the technique of choice to print the ever-shrinking nanoscale features on the silicon wafer. For successful transfer of patterns on to the wafer, the EUV photomask cannot contain defects greater than 30 nm. Megasonic cleaning is a very successful cleaning technique for removal of particles on photomasks, but also causes a relatively high amount of damage to the fragile EUV photomasks thin film structures. Though it is believed that acoustic cavitation is the primary phenomenon responsible for cleaning as well as pattern damage, a fundamental picture of the acoustic cavitation mechanisms in play during megasonic cleaning has not yet clearly emerged. In this study, we characterize the role of acoustic cavitation in megasonic cleaning by examining the effects of acoustic power densities, cleaning solution properties, and dissolved gas content on cavitation via experiments and molecular dynamics (MD) simulations. MD is an atomistic computation technique capable of modeling atomic-level and nanoscale processes accurately making it well suited to study the effect of cavitation on nano-sized particles and patterns.

Paper Details

Date Published: 29 March 2007
PDF: 13 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65171E (29 March 2007); doi: 10.1117/12.712464
Show Author Affiliations
Krishna Muralidharan, Univ. of Arizona (United States)
Manish Keswani, Univ. of Arizona (United States)
Hrishikesh Shende, Univ. of Arizona (United States)
Pierre Deymier, Univ. of Arizona (United States)
Srini Raghavan, Univ. of Arizona (United States)
Intel Corp. (United States)
Florence Eschbach, Intel Corp. (United States)
Archita Sengupta, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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