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Proceedings Paper

Absorption of extreme ultraviolet radiation in photoresists
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Paper Abstract

Extreme ultraviolet (EUV) lithography is one of the promising techniques for the fabrication of semiconductor features at or below 32 nm. One of the key parameters that can affect photoresist performance is their absorption characteristics at EUV wavelengths. The measurement of the absorption length or absorbance is important because it causes the dose to vary through the thickness of resist which can result in underexposure deeper in the resist. One method for measuring absorption length of a resist is by direct measurement of the transmission of EUV radiation through the resist when it is on a transparent membrane. The results of these measurements show the absorbance for different photoresists currently used for extreme ultraviolet lithography.

Paper Details

Date Published: 21 March 2007
PDF: 5 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172O (21 March 2007); doi: 10.1117/12.712427
Show Author Affiliations
Rashi Garg, SUNY/Albany (United States)
Alin Antohe, SUNY/Albany (United States)
Gregory Denbeaux, SUNY/Albany (United States)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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