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Proceedings Paper

Characterizing pattern structures using x-ray reflectivity
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Paper Abstract

Specular X-ray reflectivity (SXR) can be used, in the limit of the effective medium approximation (EMA), as a highresolution shape metrology for periodic patterns on a planar substrate. The EMA means that the density of the solid pattern and the space separating the periodic patterns are averaged together. In this limit the density profile as a function of pattern height obtained by SXR can be used to extract quantitative pattern profile information. Here we explore the limitations of SXR as a pattern shape metrology by studying a series of linear grating structures with periodicities ranging from 300 nm to 16 &mgr;m. The applicability of the EMA is related to the coherence length of the Xray source. For our slit-collimated X-ray source, the coherence length in the direction parallel to the long axis of the slit is on the order of 900 nm while the coherence along the main axis of the beam appears to be much greater than 16 &mgr;m. Limitations of the SXR pattern shape metrology are discussed and examples of determining quantitative pattern profiles provided.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651813 (5 April 2007); doi: 10.1117/12.712416
Show Author Affiliations
Hae-Jeong Lee, National Institute of Standards and Technology (United States)
Christopher L. Soles, National Institute of Standards and Technology (United States)
Hyun Wook Ro, National Institute of Standards and Technology (United States)
Shuhui Kang, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Alamgir Karim, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
D. R. Hines, Univ. of Maryland (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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