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Proceedings Paper

Effect of photo-acid generator concentration and developer strength on the patterning capabilities of a model EUV photoresist
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Paper Abstract

Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and processing steps for EUV photoresist specific problems such as high photoacid generator (PAG) loadings and the use of very thin films. Furthermore, new processing strategies such as changes in the developer strength and composition may enable increased resolution. In this work, model photoresists are used to investigate the influence of photoacid generator loading and developer strength on EUV lithographically printed images. Measurements of line width roughness and developed line-space patterns were performed and highlight a combined PAG loading and developer strength dependence that reduce LWR in a non-optimized photoresist.

Paper Details

Date Published: 12 April 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651943 (12 April 2007); doi: 10.1117/12.712407
Show Author Affiliations
Kwang-Woo Choi, Intel Corp. (United States)
Vivek M. Prabhu, National Institute of Standards and Technology (United States)
Kristopher A. Lavery, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
John T. Woodward, National Institute of Standards and Technology (United States)
Michael J. Leeson, Intel Corp. (United States)
Heidi B. Cao, Intel Corp. (United States)
Manish Chandhok, Intel Corp. (United States)
George Thompson, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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