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Proceedings Paper

An analysis of EUV-resist outgassing measurements
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Paper Abstract

Optics contamination is a concern for extreme ultraviolet (EUV) lithography. To protect EUV optics, all materials used in EUV vacuum exposure chambers must be screened prior to use. Photoresists are a concern since a freshly coated wafer will be introduced into the chamber approximately every minute in a high volume production tool. SEMATECH and the International EUV Initiative (IEUVI) have begun a resist outgassing benchmarking experiment to compare different outgassing methodologies. Samples of the same batch of resist were sent to eight researchers. The results show a large variation of four orders of magnitude in the amount of measured outgassing products. The next steps are to correlate outgassing measurements to witness plate experiments.

Paper Details

Date Published: 4 April 2007
PDF: 7 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191P (4 April 2007); doi: 10.1117/12.712379
Show Author Affiliations
Kim R. Dean, SEMATECH, Inc. (United States)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)
Hiroaki Oizumi, Association of Super-Advanced Electronics Technologies (Japan)
Anthony Keen, BOC Edwards, Inc. (United States)
Heidi Cao, Intel Corp. (United States)
Wang Yueh, Intel Corp. (United States)
Takeo Watanabe, Univ. of Hyogo (Japan)
Paolo Lacovig, Sincrotrone Trieste S.c.p.A (Italy)
Luca Rumiz, Sincrotrone Trieste S.c.p.A (Italy)
Gregory Denbeaux, SUNY, Univ. at Albany (United States)
Julia Simon, CEA, LETI (France)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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