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Proceedings Paper

SRAF placement and sizing using inverse lithography technology
Author(s): Timothy Lin; Frederic Robert; Amandine Borjon; Gordon Russell; Catherine Martinelli; Andrew Moore; Yves Rody
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Paper Abstract

The use of sub-resolution assist features (SRAFs) is a necessary and effective technique to mitigate the proximity effects resulting from low-k1 imaging with aggressive illumination schemes. This paper investigates the application of one implementation of Inverse Lithography Technology (ILT) to determine optimized SRAF placement and size. In contrast to traditional rule-based methods in which SRAF placement and size are typically predetermined and frozen in place, unmodified during OPC, ILT allows for the simultaneous placement and sizing of SRAFs during target inversion to maximize image quality while also maintaining margin against sidelobe printing. Furthermore, ILT enables SRAF placement for random as well as periodic patterns. In this paper, SRAF placement using this approach is studied through simulations. The computed mask and simulation results are shown to illustrate effectiveness of ILT-generated SRAF features.

Paper Details

Date Published: 26 March 2007
PDF: 15 pages
Proc. SPIE 6520, Optical Microlithography XX, 65202A (26 March 2007); doi: 10.1117/12.712369
Show Author Affiliations
Timothy Lin, Luminescent Technologies, Inc. (United States)
Frederic Robert, Crolles II Alliance (France)
Amandine Borjon, Crolles II Alliance (France)
Gordon Russell, Luminescent Technologies, Inc. (United States)
Catherine Martinelli, Crolles II Alliance (France)
Andrew Moore, Luminescent Technologies, Inc. (United States)
Yves Rody, Crolles II Alliance (France)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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