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Proceedings Paper

Process margin improvement using custom transmission EAPSM reticles
Author(s): J. Buntin; S. Agarwal; B. Rolfson; R. Housley; B. Baggenstoss; E. Byers; C. Progler
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Paper Abstract

Low k1 lithography poses a number of challenges to the process development engineer. Although polarization and immersion lithography will allow us to create processes at lower k1 than previous paradigms allowed, the lithographer will quickly be looking for Resolution Enhancement Techniques (RET) to push to the ultra-low k1 regime, or to extend older generation tools and avoid the aforementioned expensive options. Reticle transmission is a RET that can enable a low k1 process by increasing image contrast. With work performed in conjunction with our MP Mask facility, we have been able to obtain custom-transmission EAPSM reticles. Reticle transmission optimization can be carried out through simulation. Optimum transmission varies depending on optical parameters and feature size. Moreover, when working with 2D patterns, reticle transmission can be optimized for weaker features, without significantly sacrificing image contrast on primary features. Process improvement by optimizing reticle transmission will be explored for a variety of device types using both 248nm and 193nm lithography. Simulation, custom-transmission reticle fabrication, and empirical wafer results will be presented.

Paper Details

Date Published: 26 March 2007
PDF: 10 pages
Proc. SPIE 6520, Optical Microlithography XX, 65202D (26 March 2007); doi: 10.1117/12.712368
Show Author Affiliations
J. Buntin, Micron Technology Inc. (United States)
S. Agarwal, Micron Technology Inc. (United States)
B. Rolfson, Micron Technology Inc. (United States)
R. Housley, Micron Technology Inc. (United States)
B. Baggenstoss, Micron Technology Inc. (United States)
E. Byers, Micron Technology Inc. (United States)
C. Progler, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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