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Proceedings Paper

Fundamental limits to EUV photoresist
Author(s): Gregg M. Gallatin; Patrick Naulleau; Robert Brainard
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Paper Abstract

Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.

Paper Details

Date Published: 22 March 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651911 (22 March 2007); doi: 10.1117/12.712346
Show Author Affiliations
Gregg M. Gallatin, Applied Math Solutions, LLC (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Univ. at Albany (United States)
Robert Brainard, Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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