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Materials for and performance of multilayer lithography schemes
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Paper Abstract

The 45-nm node will require the use of thinner photoresists, which necessitates the use of multilayer pattern transfer schemes. One common multilayer approach is the use of a silicon-rich anti-reflective hardmask (Si BARC) with a carbon-rich pattern transfer underlayer (spin-on carbon, or SOC). The combination of the two layers provides a highly planar platform for a thin resist, and provides a route to etch substrates due to the alternating plasma etch selectivities of the organic resist, inorganic Si BARC, and organic SOC. Yet such schemes will need to be optimized both for pattern transfer and optics. Optimizing optics under hyper-NA immersion conditions is more complicated than with standard (that is, NA<1) lithography. A rigorous calculation technique is used to evaluate and compare standard lithography to a hyper-NA case using a multilayer stack. An example of such a stack is shown to have reasonable lithographic performance.

Paper Details

Date Published: 2 April 2007
PDF: 8 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192S (2 April 2007); doi: 10.1117/12.712342
Show Author Affiliations
Marc Weimer, Brewer Science, Inc. (United States)
Yubao Wang, Brewer Science, Inc. (United States)
Charles J. Neef, Brewer Science, Inc. (United States)
James Claypool, Brewer Science, Inc. (United States)
Kevin Edwards, Brewer Science, Inc. (United States)
Zhimin Zu, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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