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Proceedings Paper

Characterization of photo-acid redeposition in 193-nm photoresists
Author(s): Thomas Wallow; Marina Plat; Zhanping Zhang; Brian MacDonald; Joffre Bernard; Jeremias Romero; Bruno La Fontaine; Harry J. Levinson
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Paper Abstract

Time-of-flight secondary-ion mass spectrometry (TOF-SIMS) imaging is demonstrated as a sensitive qualitative method for characterizing surface acid concentrations and accompanying chemical changes at resist surfaces. We show its utility in analyzing the 'chemical flare' phenomenon associated with some chemically amplified photoresists. Two commercial 193 nm photoresists were studied: 'photoresist A' displays lithographic defects linked to chemical flare at die edges; 'photoresist B' does not. TOF-SIMS imaging of the surface of 'photoresist A' following exposure and post-exposure bake (PEB) reveals that die edge defects are well correlated with pronounced emanation of surface acid concentrations from, and blocking group depletion beyond, the die edge. Both photoresists also exhibit longer-range surface acidification that is not well correlated with lithographic effects. A plurality of evidence leads us to infer that photoacid migration from exposed to unexposed regions underlies the lithographic defects observed in 'photoresist A.'

Paper Details

Date Published: 22 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190T (22 March 2007); doi: 10.1117/12.712338
Show Author Affiliations
Thomas Wallow, Advanced Micro Devices, Inc. (United States)
Marina Plat, Spansion LLC. (United States)
Zhanping Zhang, Spansion LLC. (United States)
Brian MacDonald, Spansion LLC. (United States)
Joffre Bernard, Spansion LLC. (United States)
Jeremias Romero, Spansion LLC. (United States)
Bruno La Fontaine, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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