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Proceedings Paper

Contrarian approach to and ultimate solution for 193nm reticle haze
Author(s): Oleg Kishkovich; Anatoly Grayfer; Frank V. Belanger
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Paper Abstract

Despite ample phenomenological evidence of reticle haze in IC manufacturing fabs, the mechanism of reticle haze formation is not well understood. Many attempts to control reticle haze formations are driven by trial-and-error approach and results are frequently contradicting and confusing. The authors apply extensive expertise of airborne molecular contamination (AMC) measurement and control and DUV optics protection [1,2] to develop a potential solution to the issue of 193-nm reticle haze. The authors outline the common mechanism of reticle haze formation and show that chemical modification of the reticle surface during mask manufacturing procedure is largely responsible for mask reticle susceptibility to AMC and surface molecular contamination (SMC). A proposed mechanism well explains available experimental and phenomenological data and the differences seen in chemical compositions of the haze particles observed at different fabs. The authors propose a single elegant solution for controlling multiple types of haze. Effectiveness of this solution is demonstrated through the field data obtained from production fabs.

Paper Details

Date Published: 5 April 2007
PDF: 13 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183R (5 April 2007); doi: 10.1117/12.712325
Show Author Affiliations
Oleg Kishkovich, Entegris, Inc. (United States)
Anatoly Grayfer, Entegris, Inc. (United States)
Frank V. Belanger, Entegris, Inc. (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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