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Proceedings Paper

Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer
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Paper Abstract

We describe methods to determine transfer functions for line edge roughness (LER) from the photoresist pattern through the etch process into the underlying substrate. Both image fading techniques and more conventional focus-exposure matrix methods may be employed to determine the dependence of photoresist LER on the image-log-slope (ILS) or resist-edge-log-slope (RELS) of the aerial image. Post-etch LER measurements in polysilicon are similarly correlated to the ILS used to pattern the resist. From these two relationships, a transfer function may be derived to quantify the magnitude of LER that transfers into the polysilicon underlayer from the photoresist.1 A second transfer function may be derived from power spectral density (PSD) analysis of LER. This approach is desirable based on observations of pronounced etch smoothing of roughness in specific spatial frequency ranges. Smoothing functions and signal averaging of large numbers of line edges are required to partially compensate for large uncertainties in fast-Fourier transform derived PSDs of single line edges. An alternative and promising approach is to derive transfer functions from PSDs estimated using autoregressive algorithms.

Paper Details

Date Published: 11 April 2007
PDF: 6 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651919 (11 April 2007); doi: 10.1117/12.712319
Show Author Affiliations
Thomas Wallow, Advanced Micro Devices, Inc. (United States)
Alden Acheta, Advanced Micro Devices, Inc. (United States)
Yuansheng Ma, Advanced Micro Devices, Inc. (United States)
Adam Pawloski, Affymetrix, Corp. (United States)
Scott Bell, Spansion LLC (United States)
Brandon Ward, Spansion LLC (United States)
Cyrus Tabery, Advanced Micro Devices, Inc. (United States)
Bruno La Fontaine, Advanced Micro Devices, Inc. (United States)
Ryoung-han Kim, Advanced Micro Devices, Inc. (United States)
Sarah McGowan, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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