Share Email Print

Proceedings Paper

Sources and scaling laws for LER and LWR
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

LER (line edge roughness) is becoming increasingly critical for manufacturers and efforts to understand and control it have given disappointing results. We propose that LER is due to a combination of coherent optical effects, mask LER, and chemical processes during exposure, PEB (post exposure bake) and development. Different sources of LER have similar scaling laws and PSD (Power spectral density) distribution, and the causes of LER are easily misidentified. High sensitivity, thin resist, and low image log-slope generally give more LER. No single-effect model is going to be adequate to give quantitative predictive guidance how to reduce LER. Since LER is shared between chemistry, optics and metrology, a cross-disciplinary model is needed. We propose such an LER budget model with a unified analysis of the metrology and consequences of LER, but with models for source effects plugged in by experts from the relevant domains.

Paper Details

Date Published: 27 March 2007
PDF: 8 pages
Proc. SPIE 6520, Optical Microlithography XX, 65200X (27 March 2007); doi: 10.1117/12.712248
Show Author Affiliations
Tor Sandstrom, Micronic Laser Systems AB (Sweden)
Christer Rydberg, Micronic Laser Systems AB (Sweden)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

© SPIE. Terms of Use
Back to Top