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Proceedings Paper

High-performance 193-nm photoresists based on fluorosulfonamide
Author(s): Wenjie Li; Kuang-Jung Chen; Ranee Kwong; Margaret C. Lawson; Mahmoud Khojasteh; Irene Popova; P. Rao Varanasi; Tsutomu Shimokawa; Yoshikazu Yamaguchi; Shiro Kusumoto; Makoto Sugiura; Takanori Kawakami; Mark Slezak; Gary Dabbagh; Zhi Liu
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Paper Abstract

The combination of immersion lithography and reticle enhancement techniques (RETs) has extended 193nm lithography into the 45nm node and possibly beyond. In order to fulfill the tight pitch and small critical dimension requirements of these future technology nodes, the performance of 193nm resist materials needs to further improve. In this paper, a high performance 193nm photoresist system based on fluorosulfonamide (FSM) is designed and developed. The FSM group has good transparency at 193nm. Compared to the commonly used hexafluoroalcohol (HFA) group, the trifluoromethyl sulfonamide (TFSM) functionality has a lower pKa value and contains less fluorine atoms. Polymers containing the TFSM functionality have exhibited improved dissolution properties and better etch resistance than their HFA counterparts. Resists based on the FSM-containing polymers have shown superior lithographic performance for line, trench and contact hole levels under the 45nm node exposure conditions. In addition, FSM resists have also demonstrated excellent bright field and dark field compatibility and thereby make it possible to use one resist for both bright field and dark field level applications. The structure, property and lithographic performance of the FSM resist system are reported.

Paper Details

Date Published: 23 March 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190F (23 March 2007); doi: 10.1117/12.712231
Show Author Affiliations
Wenjie Li, IBM Semiconductor Research and Development Ctr. (United States)
Kuang-Jung Chen, IBM Semiconductor Research and Development Ctr. (United States)
Ranee Kwong, IBM Semiconductor Research and Development Ctr. (United States)
Margaret C. Lawson, IBM Semiconductor Research and Development Ctr. (United States)
Mahmoud Khojasteh, IBM Semiconductor Research and Development Ctr. (United States)
Irene Popova, IBM Semiconductor Research and Development Ctr. (United States)
P. Rao Varanasi, IBM Semiconductor Research and Development Ctr. (United States)
Tsutomu Shimokawa, JSR Corp. (Japan)
Yoshikazu Yamaguchi, JSR Corp. (Japan)
Shiro Kusumoto, JSR Corp. (Japan)
Makoto Sugiura, JSR Corp. (Japan)
Takanori Kawakami, JSR Corp. (Japan)
Mark Slezak, JSR Micro, Inc. (United States)
Gary Dabbagh, JSR Micro, Inc. (United States)
Zhi Liu, JSR Micro, Inc. (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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