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Proceedings Paper

Fast and accurate 3D mask model for full-chip OPC and verification
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Paper Abstract

A new framework has been developed to model 3D thick mask effects for full-chip OPC and verifications. In addition to electromagnetic (EM) scattering effects, the new model also takes into account the non-Hopkins oblique incidence effects commonly found in real lithography systems but missing in prior arts. Evaluations against rigorous simulations and experimental data showed the new model provides improved accuracy, compared to both the thin-mask model and the thick-mask model based on Hopkins treatment of oblique incidence.

Paper Details

Date Published: 26 March 2007
PDF: 12 pages
Proc. SPIE 6520, Optical Microlithography XX, 65200R (26 March 2007); doi: 10.1117/12.712171
Show Author Affiliations
Peng Liu, Brion Technologies, Inc. (United States)
Yu Cao, Brion Technologies, Inc. (United States)
Luoqi Chen, Brion Technologies, Inc. (United States)
Guangqing Chen, Brion Technologies, Inc. (United States)
Mu Feng, Brion Technologies, Inc. (United States)
Jiong Jiang, Brion Technologies, Inc. (United States)
Hua-yu Liu, Brion Technologies, Inc. (United States)
Sungsoo Suh, Samsung Electronics, Co. LTD (South Korea)
Sung-Woo Lee, Samsung Electronics, Co. LTD (South Korea)
Sukjoo Lee, Samsung Electronics, Co. LTD (South Korea)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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