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Proceedings Paper

A study on the material design for the reduction of LWR
Author(s): Hideaki Tsubaki; Tsukasa Yamanaka; Fumiyuki Nishiyama; Koji Shitabatake
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Paper Abstract

It is generally believed that the chemically amplified reaction between photo-generated acid catalyst and acid labile group of polymer during post-exposure bake (PEB) process plays a critical role for the reduction of line width roughness (LWR) in ArF lithography. In this work, we revealed experimentally how large the chemically amplified reaction affects LWR, and developed a new resist system with low LWR. Aerial image contrast dependence on LWR revealed that the innate LWR in a conventional ArF photoresist, which is independent of the aerial image contrast, was 5 nm. Surface roughness of a non-patterned resist film at half-exposed area, which was well correlated with LWR, was measured by AFM. The surface roughness increased from 1.7 nm to 10.8 nm during PEB process. The half-exposed area was baked and again dissolved into organic solution, and spin-coated on Si wafer, and then developed with 2.38 % TMAH solution. The recoated half-exposed resist film caused a 60 % reduction on the surface roughness. It revealed that uniform distribution of deblocked polymer was important factor for roughness reduction. HPLC analysis indicated that distribution of acidic group formulation in the polymer was gradually extended with increasing exposure dose. A Resist system that suppresses the chemically amplified reaction successfully reduced LWR from 6.5 nm to 4.8 nm.

Paper Details

Date Published: 22 March 2007
PDF: 8 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651918 (22 March 2007); doi: 10.1117/12.712157
Show Author Affiliations
Hideaki Tsubaki, FUJIFILM Co., Ltd. (Japan)
Tsukasa Yamanaka, FUJIFILM Co., Ltd. (Japan)
Fumiyuki Nishiyama, FUJIFILM Co., Ltd. (Japan)
Koji Shitabatake, FUJIFILM Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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