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Proceedings Paper

Methods for comparative extraction of OPC response
Author(s): Terrence E. Zavecz
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Paper Abstract

The current ITRS roadmap details the growing complexity of device design and the latest device-manufacturer's techniques for tuning their process for each new design generation. In spite of the current desire to incorporate techniques termed "Design for Manufacture" (DFM) into the sequence, simulations and the design cycle do little more than optimize feature quality for ideal exposure conditions while testing for shorts, opens and overlay problems over process variations. Testing in the DFM simulation is performed by the adaptation of a technique unchanged in the last 30 years, the Process Window analysis. With this, mediocre successes seen in chip-design have not taken their share of the burden of technology advancement. Consequently, process adaptation to each new design has fallen to increasingly complex setup procedures of the exposure toolsets that customize scanner performance for each new device. Design optimization by simulation focuses on feature layout optimization for resolution. Design solutions that take advantage of the full potential spectrum of mask-feature alternatives to increase functional process-space and simplify setup in manufacturing do not exist since there is no method of feedback. A mechanism is needed that can quantify design performance robustness, with mask-contributions, to variations in the user's specific manufacturing process. In this study, a Process Behavior Model methodology is presented for the analysis of feature profiles and films to derive the relative robustness of response to process variations for alternative OPC designs. Analysis is performed without regard to the specific mechanics of the design itself. The design alternatives of each OPC feature are shown to be strong contributors not only to resolution and depth-of-focus but also to the stability of final image response; that is the ability of the feature profile to remain at optimum under varying conditions of process exposure excursion. Several different, 70 nm multi-pitch OPC designs are compared for their response stability to fluctuations of the process. The optimal process corrections on the reticle are shown to be dependent upon not only the final image size at some optimal exposure point but also on the ability of the design to maintain feature size within tolerance across an increasingly large process-space of the target production process. The failure of the classic Process Window analysis to anticipate or provide corrective insight for performance improvement under these conditions is illustrated. Models are presented that allow the extraction of the nonlinear but systematic interactions of several OPC designs with the normal fluctuations experienced across the process exposure space plus those introduced by the toolset and filmstack variation. A method of extracting the systematic component of each feature's design-iteration is derived providing the ability to quantify the specific OPC response sensitivity to changes in the exposure and process films as well as drift introduced by the tools of the exposure set.

Paper Details

Date Published: 26 March 2007
PDF: 12 pages
Proc. SPIE 6520, Optical Microlithography XX, 65201T (26 March 2007); doi: 10.1117/12.712151
Show Author Affiliations
Terrence E. Zavecz, TEA Systems (United States)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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