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Proceedings Paper

Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL
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Paper Abstract

A new series of anionic photoacid generators (PAGs), and corresponding polymers were prepared. The thermostability of PAG bound polymers was superior to PAG blend polymers. PAG incorporated into the polymer main chain showed improved resolution when compared with the PAG blend polymers. This was demonstrated by Extreme Ultraviolet lithography (EUVL) results: the fluorine PAG bound polymer resist gave 45 nm (1:1), 35 nm (1:2), 30 nm (1:3) and 20 nm (1:4) Line/Space as well as the 50 nm (1:1),30 nm (1:2) elbow patterns.

Paper Details

Date Published: 23 March 2007
PDF: 6 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191F (23 March 2007); doi: 10.1117/12.712143
Show Author Affiliations
Mingxing Wang, Univ. of North Carolina, Charlotte (United States)
Cheng-Tsung Lee, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)
Wang Yueh, Intel Corp. (United States)
Jeanette M. Roberts, Intel Corp. (United States)
Kenneth E. Gonsalves, Univ. of North Carolina, Charlotte (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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