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Proceedings Paper

Various factors of the image blur in chemically amplified resist
Author(s): Takanori Kawakami; Tomoki Nagai; Yukio Nishimura; Motoyuki Shima; Shiro Kusumoto; Tsutomu Shimokawa
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Paper Abstract

In the current optical lithography, the resolution is being pushed for 45 nm half-pitch, and the chemically amplified resist will be used for wide variety of applications including immersion lithography. So far the chemical amplification has brought high performance for lithography. In the future, for the ArF lithography beyond 45nm half-pith, it will be important to control pattern size. On the other hand, chemically amplified resist which utilized acid catalyzed deprotecting reaction is sensitive to physical and chemical factor. Thus, there are various factors in the each process (Resist coating, Pre bake, Exposure, Post exposure bake, Development and Rinse) to cause the resist blur. For example, it's acid diffusion on PEB. The influence of these factors for the resist blur is a significant issue for lithography beyond 45 nm half-pitch. Therefore the need to reduce these factors on the resist blur becomes higher in order to extend the ArF lithography beyond 45 nm half-pith. In this paper, acid diffusion coefficient (D) and resist blur with changing anion size of PAG, size of protecting group in typical ArF resist was reported. The relationship between acid diffusion coefficient and resist blur was discussed on the basis of their difference in structure and characteristics.

Paper Details

Date Published: 21 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193K (21 March 2007); doi: 10.1117/12.712088
Show Author Affiliations
Takanori Kawakami, JSR Corp. (Japan)
Tomoki Nagai, JSR Corp. (Japan)
Yukio Nishimura, JSR Corp. (Japan)
Motoyuki Shima, JSR Corp. (Japan)
Shiro Kusumoto, JSR Corp. (Japan)
Tsutomu Shimokawa, JSR Corp. (Japan)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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