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Proceedings Paper

A study of process extension technologies
Author(s): Sang-Kon Kim
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Paper Abstract

Current 193 nm optical lithography and commercially available 193 nm resists are pushed far beyond previously expected critical dimension by using the process extension technology for the resolution enhancements technology. This paper deals with three kinds of process extension technologies such as thermal treatment, polarization, and double patterning. Those technologies are tried to model and analyze. Supposed the 50% pattern shrinkage due to thermal treatment, 25% resolution enhancement due to polarization, and the 50% pattern shrinkage due to double patterning, an effective combination can generate a sub-50 nm pattern. When pattern size is smaller, optical proximity effects are more severe. After describing optical proximity effects for each of technologies, optical proximity correction methods are discussed.

Paper Details

Date Published: 22 March 2007
PDF: 6 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193X (22 March 2007); doi: 10.1117/12.712062
Show Author Affiliations
Sang-Kon Kim, Catholic Univ. of Korea (South Korea)
Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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