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Proceedings Paper

Image tone optimization in advanced mask making for DUV lithography
Author(s): Jong-doo Kim; Mun-hoe Do; Seong-ho Jeong; Jea-hee Kim; Keeho Kim
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Paper Abstract

Deep-UV (DUV) lithography has been developed to define minimum feature sizes of sub-100 nm dimensions of devices semiconductor. In response to this trend, DUV mask technology has been proposed as an effective technique for considering the reduction of mask making cost, especially, in low volume designs. However, the requirement of tight CD control of the mask features in advanced devices is resulted in increasing of mask cost. In this research, we discussed two different typed image tones comparison, positive and negative tone, in DUV lithography. The choice of final mask tone needs to be selected as function of pattern density and shape. The evaluation items to judge if the mask is good are the OPC model accuracy, resolution and mask throughput. Both mask process and manufacturing throughput are affected by image tone type of positive and negative. This paper will show the procedures and results of experiment.

Paper Details

Date Published: 21 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193L (21 March 2007); doi: 10.1117/12.712038
Show Author Affiliations
Jong-doo Kim, Dongbu Electronics Co., Ltd. (South Korea)
Mun-hoe Do, Dongbu Electronics Co., Ltd. (South Korea)
Seong-ho Jeong, Dongbu Electronics Co., Ltd. (South Korea)
Jea-hee Kim, Dongbu Electronics Co., Ltd. (South Korea)
Keeho Kim, Dongbu Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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