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Proceedings Paper

Study on the reduction of defects in immersion lithography
Author(s): Keundo Ban; Sarohan Park; Cheolkyu Bok; Heeyoul Lim; Junggun Heo; Hyunsook Chun; Junghyun Kang; Seungchan Moon
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Paper Abstract

ArF Immersion lithography is expected to be a production-worthy technology for sub-60nm DRAM. It gives wider process window and better CD uniformity at the cost of defects and overlay accuracy. It is generally mentioned that immersion defects are generated during exposure and removed through pre-soak and post-soak process. A lot of efforts are being made towards less defect generation during exposure and more defect removal through pre-soak and postsoak process. We have experienced a variety of immersion defects and classified them into four types: bubble defect, water mark defect (T-top & Stain), swelling defect and bridge defect (Macro & Micro). We have worked very hard to reduce each immersion defects with immersion exposure and system. In this paper, we investigate method to reduce each immersion defects: bubble, water mark, swelling and bridge through our experiment.

Paper Details

Date Published: 2 April 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191V (2 April 2007); doi: 10.1117/12.712029
Show Author Affiliations
Keundo Ban, Hynix Semiconductor Inc. (South Korea)
Sarohan Park, Hynix Semiconductor Inc. (South Korea)
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Heeyoul Lim, Hynix Semiconductor Inc. (South Korea)
Junggun Heo, Hynix Semiconductor Inc. (South Korea)
Hyunsook Chun, Hynix Semiconductor Inc. (South Korea)
Junghyun Kang, Hynix Semiconductor Inc. (South Korea)
Seungchan Moon, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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