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Proceedings Paper

Development of optical component for EUV phase-shift microscopes
Author(s): Yoshio Mizuta; Masafumi Osugi; Jyunki Kishimoto; Noriyuki Sakaya; Kazuhiro Hamamoto; Takeo Watanabe; Hiroo Kinoshita
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Paper Abstract

This paper is described about fabrication and evaluation of the beam splitter used in an EUV region. This beam splitter has to be as a free standing, stress control of multilayer is main subject. It is investigated that the dependence of the intrinsic stress between a RF (DC) sputtering power and an argon pressure during the thin film deposition processes. At the low argon pressure, molybdenum and silicon films showed both high compressive stress. However, at the high argon pressure, the molybdenum and silicon films showed low tensile stress and low compressive stress, respectively. Therefore, it was possible to fabricate a multilayer films with low tensile stress by optimizing the argon pressure and applied RF power during deposition. Conclusively, a free-standing semitrasparent multilayer film of 8x22 mm area was fabricated. It shows high reflectance and transmission of near 25% at the wavelength of EUV region.

Paper Details

Date Published: 21 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651733 (21 March 2007); doi: 10.1117/12.711997
Show Author Affiliations
Yoshio Mizuta, Univ. of Hyogo (Japan)
CREST-JST (Japan)
Masafumi Osugi, Univ. of Hyogo (Japan)
CREST-JST (Japan)
Jyunki Kishimoto, Univ. of Hyogo (Japan)
CREST-JST (Japan)
Noriyuki Sakaya, HOYA Corp. (Japan)
CREST-JST (Japan)
Kazuhiro Hamamoto, HOYA Corp. (Japan)
CREST-JST (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
CREST-JST (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)
CREST-JST (Japan)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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