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Proceedings Paper

Effect of deprotection activation energy on lithographic performance of EUVL resist
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Paper Abstract

As the feature size becomes smaller, it is difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory device. Extreme Ultra Violet Lithography (EUVL) is a preferred solution for the 32nm node. In this paper, we have synthesized two types of polymers. One is based on hydroxy phenol, the other is based on hydrocarbon acrylate type polymer. We have diversified each polymer type according to different activation energies for deprotection reaction. In this experiment, we have observed on the resist lithographic performance such as resolution, LER (Line Edge Roughness), photo-sensitivity, and out-gassing during exposure. Different properties according to activation energy were well explained by acid diffusion and polymer free-volume.

Paper Details

Date Published: 23 March 2007
PDF: 12 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651947 (23 March 2007); doi: 10.1117/12.711951
Show Author Affiliations
Sang-Jeoung Kim, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Geun-Jong Yu, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Jung-Yeol Lee, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Hyun-Jin Kim, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Jae-Woo Lee, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Deog-Bae Kim, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Yool Kang, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)
Jaehyun Kim, Dongjin Semichem Co., Ltd (South Korea)
Samsung Electronics Co., Ltd (South Korea)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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