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Proceedings Paper

Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks
Author(s): Kenji Hiruma; Yuusuke Tanaka; Shinji Miyagaki; Jerry Cullins; Iwao Nishiyama
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Paper Abstract

To reduce the surface roughness of a substrate for mask blanks for extreme ultraviolet (EUV) lithography, the layers of a Mo-Si multilayer structure being deposited by magnetron sputtering were treated with an assisted ion beam. The effectiveness was analyzed by atomic force microscopy, X-ray reflection diffraction, and EUV reflectivity measurements, which revealed a large improvement in the interface and surface roughness, resulting in a multilayer with better EUV performance than one formed without such treatment.

Paper Details

Date Published: 15 March 2007
PDF: 10 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651720 (15 March 2007); doi: 10.1117/12.711909
Show Author Affiliations
Kenji Hiruma, Association of Super-Advanced Electronics Technologies (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Miyagaki, Association of Super-Advanced Electronics Technologies (Japan)
Jerry Cullins, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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