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Proceedings Paper

Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation
Author(s): Takayuki Makino
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Paper Abstract

A quantitative interpretation of the anomalous temperature behavior is presented to describe the so-called "S-shape dependence" of the photoluminescence (PL) in ZnO-related quantum well layers by using an appropriate modeling and simulation. Experimental data for CdZnO/MgZnO and ZnO/MgZnO samples are modeled using Monte Carlo simulations of the involved relaxation mechanisms and thus providing a realistic picture of the excitonic kinetics. The temperature dependence of the PL maximum and full-width at half maximum could be simultaneously reproduced with reasonably good accuracy. Several informations about the distribution of the localization potential wells and identify their hopping transfers between separated states are deduced. We found that the temperature-dependent PL linewidth and Stokes shift is in a qualitatively reasonable agreement with the above-mentioned model, with accounting for an additional inhomogeneous broadening for the case of linewidth for CdZnO quantum wells. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.

Paper Details

Date Published: 20 February 2007
PDF: 13 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647403 (20 February 2007); doi: 10.1117/12.711898
Show Author Affiliations
Takayuki Makino, Univ. of Hyogo (Japan)


Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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