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Proceedings Paper

Verification of high-transmittance PSM with polarization at 193-nm high-NA system
Author(s): Chui Fu Chiu; Chih Li Chen; Jenn Wei Lee; Wen Bin Wu; Chiang Lin Shih; Feng Yi Chen; Jeng Ping Lin
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Paper Abstract

High-transmittance phase shift mask (HTPSM) and high numerical aperture (NA) imaging with polarized illumination have been proposed as one of the solutions of the 65nm technology node and beyond. Both aerial image simulations and experimental exposure results confirm the advantages of the polarized illumination for high NA imaging. However, influence of transmission rate of the PSM status upon imaging performance had not yet been fully investigated. Consequently, the influence of different transmission rate PSM with polarized illumination upon imaging performance including depth of focus (DOF), exposure latitude (EL) and line edge roughness (LER) has been researched in this study. Simulation of normalized intensity log slope (NILS) vs. mask transmission rate for the through pitch line space patterns compared with experimental data are clearly showed. Masks of various transmission rates from 6%~30% have been designed. The print images had been investigated with and without polarized illuminations of 193nm high NA tool. According to the experimental and simulation results, the high transmission rate 15% PSM certainly could enhance resolution for 50nm node and beyond.

Paper Details

Date Published: 27 March 2007
PDF: 4 pages
Proc. SPIE 6520, Optical Microlithography XX, 65202E (27 March 2007); doi: 10.1117/12.711893
Show Author Affiliations
Chui Fu Chiu, NANYA Technology Corp. (Taiwan)
Chih Li Chen, NANYA Technology Corp. (Taiwan)
Jenn Wei Lee, NANYA Technology Corp. (Taiwan)
Wen Bin Wu, NANYA Technology Corp. (Taiwan)
Chiang Lin Shih, NANYA Technology Corp. (Taiwan)
Feng Yi Chen, NANYA Technology Corp. (Taiwan)
Jeng Ping Lin, NANYA Technology Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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