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Proceedings Paper

Silicon-based anti-reflective spin-on hardmask materials with improved storage stability for 193-nm lithography
Author(s): Sang Kyun Kim; Sang Hak Lim; Do-hyeon Kim; Sang Ran Koh; Mi-young Kim; Hui Chan Yoon; Dong Seon Uh; Jong Seob Kim; Tuwon Chang
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Paper Abstract

As the feature sizes of integrated circuits shrink, thinner photoresist coating should be used in order to avoid high aspect ratio which can cause pattern collapse. Especially for 193 nm lithography, photoresist coating is too thin to subsequent etching step. One of the solutions to this problem is using hardmasks which have good etch selectivity to adjacent layers. In this paper, silicon-based anti-reflective spin-on hardmasks (Si-SOH) are described. One of the major problems of silicon based polymers in the hardmask compositions is poor storage stability because silanol group is reactive enough to condense each other, which can instigate molecular weight increase to yield gel-type particles. The storage stability of our hardmask materials have been improved by thermodynamically controlled synthesis and reactive mask strategy. Especially the reactive masked silanol groups can take part in crosslinking reaction under the process conditions without additional deprotection step. Although this strategy could encounter intermixing problems with other layers, we can produce silicon-based hardmasks without any deleterious effects. These hardmasks show antireflective properties and great etch selectivity to both photoresists and organic hardmasks (C-SOH).

Paper Details

Date Published: 30 March 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190O (30 March 2007); doi: 10.1117/12.711866
Show Author Affiliations
Sang Kyun Kim, Samsung Cheil Industries, Inc. (South Korea)
Sang Hak Lim, Samsung Cheil Industries, Inc. (South Korea)
Do-hyeon Kim, Samsung Cheil Industries, Inc. (South Korea)
Sang Ran Koh, Samsung Cheil Industries, Inc. (South Korea)
Mi-young Kim, Samsung Cheil Industries, Inc. (South Korea)
Hui Chan Yoon, Samsung Cheil Industries, Inc. (South Korea)
Dong Seon Uh, Samsung Cheil Industries, Inc. (South Korea)
Jong Seob Kim, Samsung Cheil Industries, Inc. (South Korea)
Tuwon Chang, Samsung Cheil Industries, Inc. (South Korea)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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