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Proceedings Paper

The resist materials study for the outgassing reduction and LWR improvement in EUV lithography
Author(s): Seiya Masuda; Sou Kamimura; Shuuji Hirano; Wataru Hoshino; Kazuyoshi Mizutani
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Paper Abstract

The continuous studies for both the outgassing reduction and the sensitivity improvement by applying low outgassing photo acid generator with a various kinds of polymer protection group were discussed in this paper. Further reduction of the outgassing segments from the resist was demonstrated to achieve the total outgassing amount below the detection limit of GC-MS (ca. less than 1E+10 molecules / cm2). Loading a large sized acetal group could be successfully reduced the amount of the outgassing segments from polymer below the tool detection limit, which would be acceptable for a high volume manufacturing tool usage. The development properties of PHS based bulky acetal polymers were measured by changing molecular weight. The high dissolution rate contrast was obtained with the bulky acetel protected low molecular weight polymer. A resolution capability study was carried out with micro exposure tool (MET) at LBNL and Albany. The correlation between LWR through CD and DOF was measured by loading various amounts of quencher. The resolution capability of newly developed EUV resist had been successfully improved by modifying both resist polymer matrix and quencher amount optimization. It was possible to obtain 27.7nm lines with MET tool, where LWR value at 35 nm L/S was 3.9 nm with reasonable sensitivity range.

Paper Details

Date Published: 2 April 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191O (2 April 2007); doi: 10.1117/12.711864
Show Author Affiliations
Seiya Masuda, FUJIFILM Corp. (Japan)
Sou Kamimura, FUJIFILM Corp. (Japan)
Shuuji Hirano, FUJIFILM Corp. (Japan)
Wataru Hoshino, FUJIFILM Corp. (Japan)
Kazuyoshi Mizutani, FUJIFILM Corp. (Japan)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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