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Proceedings Paper

Virtual OPC at hyper NA lithography
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Paper Abstract

Virtual OPC concept is suggested for soothing the problem that the roadmap of semiconductor devices proceeds the rate of development of exposure tools. Virtual OPC uses the simulated CD data for an OPC modeling instead of the measured CD data. For successful virtual OPC, the extreme accuracy of the simulation is required for obtaining the simulated CD data close to the actual CD values. In this paper, our efforts to enhance the simulation accuracy are presented and the accuracy of simulated sample data for OPC is verified. The applicability of virtual OPC to the production of devices was verified by performing the virtual OPC using the simulated sample data at 1.2 NA lithography and the result also is presented.

Paper Details

Date Published: 27 March 2007
PDF: 8 pages
Proc. SPIE 6520, Optical Microlithography XX, 65203X (27 March 2007); doi: 10.1117/12.711827
Show Author Affiliations
Sook Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Wook Kim, Samsung Electronics Co., Ltd. (South Korea)
Yong-Jin Chun, Samsung Electronics Co., Ltd. (South Korea)
Sung-Soo Suh, Samsung Electronics Co., Ltd. (South Korea)
Yun-Kyeong Jang, Samsung Electronics Co., Ltd. (South Korea)
Suk-Joo Lee, Samsung Electronics Co., Ltd. (South Korea)
Sung-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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