Share Email Print
cover

Proceedings Paper

Three-dimensional X-ray lithography using a silicon mask with inclined absorbers
Author(s): Harutaka Mekaru; Takayuki Takano; Koichi Awazu; Masaharu Takahashi; Ryutaro Maeda
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We proposed a new fabrication method of an X-ray gray mask using MEMS technologies, and we also succeeded in fabricating three-dimensional microstructures on a PMMA sheet by using only a single X-ray exposure. Silicon can be diagonally etched by optimizing the etching condition in a RIE process. We thought X-ray absorbers of an X-ray mask were processed to three-dimensional shape, and a gray mask for the X-ray lithography was fabricated by using a tapered-trench- etching technique. Then, we experimented on the X-ray lithography using the beamline BL-4 in the synchrotron radiation facility TERAS of AIST. The total dose energy was 150 mAxh and the development was performed at the room temperature for 16 h using a GG developer. Sidewalls in the upper part of the PMMA resist structure were inclined and rounded. Especially, the shape of the PMMA resist structure of the line width 20 μm was able to be processed to shape like the target. Thus, the effectiveness of the gray mask that adjusted the thickness of absorber was confirmed by X-ray lithography experiments. Moreover, we experimentally showed that the final shape of PMMA resist structures after the X-ray lithography was predictable by the calculation.

Paper Details

Date Published: 21 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651735 (21 March 2007); doi: 10.1117/12.711824
Show Author Affiliations
Harutaka Mekaru, National Institute of Advanced Industrial Science and Technology (Japan)
Takayuki Takano, National Institute of Advanced Industrial Science and Technology (Japan)
Koichi Awazu, National Institute of Advanced Industrial Science and Technology (Japan)
Masaharu Takahashi, National Institute of Advanced Industrial Science and Technology (Japan)
Ryutaro Maeda, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

© SPIE. Terms of Use
Back to Top