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Proceedings Paper

Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition
Author(s): A. E. Yakshin; R. W. E. van de Kruijs; I. Nedelcu; E. Zoethout; E. Louis; F. Bijkerk; H. Enkisch; S. Müllender
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Paper Abstract

A new deposition technique that builds on the thermal particle characteristics typical for e-beam deposition is described. This technique applies magnetron sputtering in a special scheme where these characteristics of the e-beam deposition method are achieved. The method was used for interface engineering of Mo/Si multilayers, with different barrier layer materials being tested. Composition of the barrier layers formed was studied using XPS. Results are shown on the general example of a Mo/B4C/Si/B4C system. The ultra-thin reflectance enhancement B4C barriers can be deposited with low added stress, resulting in a multilayer stress as low as about -150 MPa. The best interface engineered multilayers reflect 70.5% at 13.3 nm and 70.15% at 13.5 nm. These results were achieved with 50 period multilayers terminated with a standard Si layer.

Paper Details

Date Published: 29 March 2007
PDF: 9 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170I (29 March 2007); doi: 10.1117/12.711796
Show Author Affiliations
A. E. Yakshin, FOM Institute for Plasma Physics Rijnhuizen (Netherlands)
R. W. E. van de Kruijs, FOM Institute for Plasma Physics Rijnhuizen (Netherlands)
I. Nedelcu, FOM Institute for Plasma Physics Rijnhuizen (Netherlands)
E. Zoethout, FOM Institute for Plasma Physics Rijnhuizen (Netherlands)
E. Louis, FOM Institute for Plasma Physics Rijnhuizen (Netherlands)
F. Bijkerk, FOM Institute for Plasma Physics Rijnhuizen (Netherlands)
H. Enkisch, Carl Zeiss SMT AG (Germany)
S. Müllender, Carl Zeiss SMT AG (Germany)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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