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Material design of negative-tone polyphenol resist for EUV and EB lithography
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Paper Abstract

In order to enable design of a negative-tone polyphenol resist using polarity-change reaction, five resist compounds (3M6C-MBSA-BLs) with different number of functional group of &ggr;-hydroxycarboxyl acid were prepared and evaluated by EB lithography. The resist using mono-protected compound (3M6C-MBSA-BL1a) showed 40-nm hp resolution at an improved dose of 52 &mgr;C/cm2 probably due to removal of a non-protected polyphenol while the sensitivity of the resist using a compound of protected ratio of 1.1 on average with distribution of different protected ratio was 72 &mgr;C/cm2. For evaluation of the di-protected compound based resist, a di-protected polyphenol was synthesized by a newly developed synthetic route of 3-steps reaction, which is well-suited for mass production. The resist using di-protected compound (3M6C-MBSA-BL2b) also showed 40-nm hp resolution at a dose of 40 &mgr;C/cm2, which was faster than that of mono-protected resist. Fundamental EUV lithographic evaluation of the resist using 3M6C-MBSA-BL2b by an EUV open frame exposure tool (EUVES-7000) gave its estimated optimum sensitivity of 7 mJ/cm2 and a proof of fine development behavior without any swelling.

Paper Details

Date Published: 22 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191D (22 March 2007); doi: 10.1117/12.711759
Show Author Affiliations
Kyoko Kojima, Hitachi, Ltd. (Japan)
Shigeki Mori, Hitachi ULSI Systems. Co., Ltd. (Japan)
Daiju Shiono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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