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Proceedings Paper

Scanner-characteristics-aware OPC modeling and correction
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Paper Abstract

As scanner projection lens captures only a finite number of IC pattern diffraction orders. This low pass filtering leads to a range of optical proximity effects such as pitch-dependent CD variations, corner rounding and line-end pullback, resulting in imaged IC pattern excursions from the intended designs. These predictable OPEs are driven by the imaging conditions, such as wavelength, illuminator layout, reticle technology, and lens numerical aperture. To mitigate the pattern excursion due to OPEs, the photolithography community developed optical proximity correction methodologies, adopted and refined by the EDA industry. In the current implementations, OPC applied to IC designs can correct layouts to compensate for OPEs and to provide imaged patterns meeting the design requirements.

Paper Details

Date Published: 21 March 2007
PDF: 13 pages
Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 65210Z (21 March 2007); doi: 10.1117/12.711624
Show Author Affiliations
Jacek K. Tyminski, Nikon Precision, Inc. (United States)
Qiaolin Zhang, Synopsys, Inc. (United States)
Kevin Lucas, Synopsys, Inc. (United States)
Laurent Depre, Synopsys, Inc. (France)
Paul VanAdrichem, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 6521:
Design for Manufacturability through Design-Process Integration
Alfred K.K. Wong; Vivek K. Singh, Editor(s)

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