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Proceedings Paper

PAG distribution and acid thermal diffusion study in ultra-thick chemically amplified resist films
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Paper Abstract

The introduction of chemically amplified (CA) resist technology to thick films, 10 to 100 um in thickness introduced a number of behavior differences not experienced in thinner films to the same magnitudes. Resist image profile deformation, insensitivity to standing waves and the reduction in polymer deblocking temperatures are significantly affected in thick films to a larger extend than in thinner films. The major contributing factors to these differences are discussed in this paper: 1) the influence of photo-acid generator (PAG) structure on its distribution in resist depth on Cu substrates and 2) thermal acid diffusion, influenced by greater amounts of retained solvents in thick films than in thinner films.

Paper Details

Date Published: 2 April 2007
PDF: 8 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192M (2 April 2007); doi: 10.1117/12.711621
Show Author Affiliations
Medhat Toukhy, AZ Electronic Materials USA Corp. (United States)
Margareta Paunescu, AZ Electronic Materials USA Corp. (United States)
Chunwei Chen, AZ Electronic Materials USA Corp. (United States)
Georg Pawlowski, AZ Electronic Materials USA Corp. (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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