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Proceedings Paper

Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes
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Paper Abstract

In this work, an AlSb-containing Type II InAs/GaSb superlattice, the so-called M-structure, is presented as a candidate for mid and long wavelength infrared detection devices. The effect of inserting an AlSb barrier in the GaSb layer is discussed and predicts many promising properties relevant to practical use. A good agreement between the theoretical calculation based on Empirical Tight Binding Method framework and experimental results is observed, showing the feasibility of the structure and its properties. A band gap engineering method without material stress constraint is proposed.

Paper Details

Date Published: 21 February 2007
PDF: 10 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64790S (21 February 2007); doi: 10.1117/12.711588
Show Author Affiliations
B-M. Nguyen, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)
V. Nathan, Air Force Research Lab, VSSS (United States)
Gail J. Brown, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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