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Proceedings Paper

Influence of wafer warpage on photoresist film thickness and extinction coefficient measurements
Author(s): Xiaodong Wu; Arthur Tay
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Paper Abstract

Photoresist film thickness and extinction coefficient are two important properties which has an impact on critical dimension (CD). Current approaches for estimating these resist film properties are based on the assumption of a flat wafer. However, wafer warpage is common in microelectronics processing. In this paper, the effect of wafer warpage on the accuracy of resist properties estimation is investigated and an in-situ calibration method is proposed. Based on the proposed approach, we demonstrate how wafer warpage can be detected in real-time using conventional reflectometers during the thermal processing steps in lithography.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184F (5 April 2007); doi: 10.1117/12.711493
Show Author Affiliations
Xiaodong Wu, National Univ. of Singapore (Singapore)
Arthur Tay, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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