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Proceedings Paper

Novel polymeric anionic photo-acid generators (PAGs) and photoresists for sub-100-nm patterning by 193-nm lithography
Author(s): Mingxing Wang; Nathan D. Jarnagin; Wang Yueh; Jeanette M. Roberts; Melina Tapia-Tapia; Nikola Batina; Kenneth E. Gonsalves
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Paper Abstract

A series of new anionic PAGs, as well as PAG bound polymers designed for use in 193 nm photoresist materials have been synthesized and characterized. These novel materials provide optical transparency at 193 nm and also etch resistance. The fluorine substituted PAG bound polymer and PAG blend resist provided 110 nm (220 nm pitch) line/space at 11.5, 13.0 mJ/cm2, and 80 nm isolated features at 3, 1 mJ/cm2, respectively. The LER (3&sgr;) results showed the fluorinated PAG bound polymer have LER values 6.7 nm and 6.8 nm for isolated 80 nm and dense 110 nm lines respectively, which were lower than the PAG Blend polymers

Paper Details

Date Published: 23 March 2007
PDF: 6 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192C (23 March 2007); doi: 10.1117/12.711477
Show Author Affiliations
Mingxing Wang, Univ. of North Carolina, Charlotte (United States)
Nathan D. Jarnagin, Univ. of North Carolina, Charlotte (United States)
Wang Yueh, Intel Corp. (United States)
Jeanette M. Roberts, Intel Corp. (United States)
Melina Tapia-Tapia, Univ. Autonoma Metropolitana, Iztapalapa (Mexico)
Nikola Batina, Univ. Autonoma Metropolitana, Iztapalapa (Mexico)
Kenneth E. Gonsalves, Univ. of North Carolina, Charlotte (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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