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Proceedings Paper

Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithography
Author(s): Yasuhiro Kishikawa; Miyoko Kawashima; Akinori Ohkubo; Yuichi Iwasaki; Seiji Takeuchi; Minoru Yoshii; Tokuyuki Honda
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Paper Abstract

The resist blur due to photoacid diffusion is a significant issue for 45-nm half-pitch node and beyond. Furthermore, it has been generally recognized that there is a trade-off between resist resolution and sensitivity. In this paper, we study the influence of the resist blur on resolution and sensitivity in hyper-numerical aperture ArF immersion lithography by utilizing a two-beam interferometric exposure tool. We evaluated the current photoresist performance for some of the latest commercial resists, and estimated their acid diffusion lengths as 8 to 9 nm in sigma assuming Gaussian blur kernel. In addition, we found that the acid diffusion length, that is, the resist resolution was controllable by PAG anion size, polymer resin size, and PEB temperature. We also found that there was the trade-off between resist resolution and sensitivity. Our results indicated that the resist blur is still a concern in order to extend ArF lithography for 45-nm half-pitch node and beyond, however, it will not likely be a showstopper. We consider that total optimization of resists and exposure tools is important in order to achieve ultimate resolution in hyper-NA immersion lithography.

Paper Details

Date Published: 26 March 2007
PDF: 9 pages
Proc. SPIE 6520, Optical Microlithography XX, 65203L (26 March 2007); doi: 10.1117/12.711420
Show Author Affiliations
Yasuhiro Kishikawa, Canon Inc. (Japan)
Miyoko Kawashima, Canon Inc. (Japan)
Akinori Ohkubo, Canon Inc. (Japan)
Yuichi Iwasaki, Canon Inc. (Japan)
Seiji Takeuchi, Canon Inc. (Japan)
Minoru Yoshii, Canon Inc. (Japan)
Tokuyuki Honda, Canon Inc. (Japan)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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