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Proceedings Paper

Structure and stability characterization of anti-adhesion self-assembled monolayers formed by vapor deposition for NIL use
Author(s): Sophie Garidel; Marc Zelsmann; Pauline Voisin; Nevine Rochat; Philippe Michallon
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Paper Abstract

Anti-sticking efficiency remains a key issue in nanoimprint lithography. In order to address this problem, a selfassembled monolayer (SAM) of a fluorinated silane release agent is generally applied to the stamp surface, either in wet or in vapour phase. We present here the study on vapour deposition of (tridecafluoro-1,1,2,2-tetrahydrooctyl)TriChloroSilane (F13-TCS) and wet and vapour deposition of a commercial product, OPTOOL DSX from Daikin. They are both fluorinated silanes used for the formation of anti-adhesive layers in nanoimprint lithography. Results will be compared in term of anti-adhesion properties and homogeneity for the obtained layers. Characterizations are made by means of contact angle measurements, Fourier Transform Infra-Red analysis and Atomic Force Microscopy observations. The vapour phase deposition of F13-TCS allows us to reach surface energies as low as 11mN/m without increasing initial roughness. OPTOOL DSXTM deposition in wet phase presents comparable results, but with an increased roughness mainly due to the deposition procedure. The durability of the formed layers was investigated as a function of number of prints. For both materials, a significant degradation of the anti-adhesion properties occurs after few imprinted dies.

Paper Details

Date Published: 21 March 2007
PDF: 9 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172C (21 March 2007); doi: 10.1117/12.711417
Show Author Affiliations
Sophie Garidel, CEA LETI-MINATEC (France)
Marc Zelsmann, LTM-CNRS (France)
Pauline Voisin, CEA LETI-MINATEC (France)
LTM-CNRS (France)
ST Microelectronics (France)
Nevine Rochat, CEA LETI-MINATEC (France)
Philippe Michallon, CEA LETI-MINATEC (France)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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