Share Email Print
cover

Proceedings Paper

Overlay metrology for dark hard mask process: simulation and experiment study
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Simulation and experimental study results are reported to solve align/overlay problem in dark hard mask process in lithography. For simulation part, an in-house simulator, which is based on rigorous coupled wave analysis and Fourier optics method of high NA imaging, is used. According to the simulation and experiment study, image quality of alignment and overlay marks can be optimized by choosing hard mask and sub-film thickness carefully for a given process condition. In addition, it is important to keep the specification of film thickness uniformity within a certain limit. Simulation results are confirmed by experiment using the state of art memory process in Samsung semiconductor R&D facility.

Paper Details

Date Published: 5 April 2007
PDF: 6 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182U (5 April 2007); doi: 10.1117/12.711389
Show Author Affiliations
Jangho Shin, Samsung Semiconductor Research and Development (South Korea)
Roman Chalykh, Samsung Semiconductor Research and Development (South Korea)
Hyunjae Kang, Samsung Semiconductor Research and Development (South Korea)
SeongSue Kim, Samsung Semiconductor Research and Development (South Korea)
SukJoo Lee, Samsung Semiconductor Research and Development (South Korea)
Han-Ku Cho, Samsung Semiconductor Research and Development (South Korea)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

© SPIE. Terms of Use
Back to Top