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Proceedings Paper

Feasibility Study of 45nm Metal Patterning with 0.93 NA
Author(s): Yung Feng Cheng; Yueh Lin Chou; Ya Ching Hou; Bo Jou Lu; Chuen Huei Yang
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Paper Abstract

As semiconductor process technology moves to 65nm and beyond, RET (resolution enhancement technology) becomes more and more important, especially in low k1 processes, where it is used frequently. Currently, in the 65nm generation, the k1 is ~0.4 on a 0.85 NA exposure tool. However, the NA improvement of the exposure tool cannot meet the schedule of generation movement very well. Low k1 technology must be applied on next generation processes. For the 45nm generation, a 0.93 NA exposure tool is available currently and is used to achieve the production criteria. Because the k1 value is quite low (~0.31), using traditional methods cannot satisfy process requirements. For metal layers of the 45nm generation, 55nm photo-resist CD (critical dimension) patterning of 130nm pitch is a difficult goal on a 0.93 NA exposure tool. Traditional OAI (off-axis-llumination) (annular mode) cannot provide enough image contrast for pattern printing. Customization of illumination mode is an approach on low k1 processes. Another one is utilizing light source polarization to achieve resolution improvement. In this paper, we introduce different approaches on 45nm metal patterning. The RET approach (C-quad. illumination mode with polarization) can provide enough image contrast in pattern printing to solve process issues.

Paper Details

Date Published: 27 March 2007
PDF: 8 pages
Proc. SPIE 6520, Optical Microlithography XX, 65204J (27 March 2007); doi: 10.1117/12.711367
Show Author Affiliations
Yung Feng Cheng, United Microelectronics Corp. (Taiwan)
Yueh Lin Chou, United Microelectronics Corp. (Taiwan)
Ya Ching Hou, United Microelectronics Corp. (Taiwan)
Bo Jou Lu, United Microelectronics Corp. (Taiwan)
Chuen Huei Yang, United Microelectronics Corp. (Taiwan)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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