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Proceedings Paper

Impact of airborne NH3 and humidity against wafer-to-wafer CD variation in ArF lithography through 45-nm technology node
Author(s): Ryoichiro Naito; Yoshitaka Matsuda; Masaharu Shioguchi; Tsuyoshi Shibata
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Paper Abstract

An impact of air-borne NH3 and humidity against a wafer-to-wafer (WTW) CD variation is investigated. An environmental stability of ArF resist materials is also investigated through the design of experiment (DOE) analysis, where the different resist formulations are chosen as variation factors. Assuming the most environmentally sensitive ArF resist material used in the 45nm 1:1 LS pattern imaging (worst case scenario), the WTW CD variations caused by air-borne NH3 and humidity fluctuations are estimated to be 0.10nm and 0.29nm, respectively.

Paper Details

Date Published: 2 April 2007
PDF: 6 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193D (2 April 2007); doi: 10.1117/12.711334
Show Author Affiliations
Ryoichiro Naito, Tokyo Electron Kyushu Ltd. (Japan)
Yoshitaka Matsuda, Tokyo Electron Kyushu Ltd. (Japan)
Masaharu Shioguchi, Tokyo Electron Kyushu Ltd. (Japan)
Tsuyoshi Shibata, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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