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Proceedings Paper

Distribution control of protecting groups and its effect on LER for EUV molecular resist
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Paper Abstract

We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45 nm patterning at an exposure dose of 12 mJ/cm2. It was found that controlling the distribution of the protecting groups in a molecular resist material has a great impact on improving Line Edge Roughness (LER). Low LER values of 3.1 nm (inspection length: L = 620 nm) and 3.6 nm (L = 2000 nm) were achieved with this molecular resist using Extreme UltraViolet (EUV) lithography tool.

Paper Details

Date Published: 12 April 2007
PDF: 6 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193U (12 April 2007); doi: 10.1117/12.711311
Show Author Affiliations
Daiju Shiono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroto Yukawa, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroaki Oizumi, ASET NTT (Japan)
Iwao Nishiyama, ASET NTT (Japan)
Kyoko Kojima, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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