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Proceedings Paper

Fast simulation of buried EUV mask defect interaction with absorber features
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Paper Abstract

To simulate the interaction of buried defects and absorber features in EUV masks and their effects on projection printing, a prototype 2D, fast, integrated, simulator based on ray tracing and a thin mask model is presented. RADICAL (Rapid Absorber Defect Interaction Computation for Advanced Lithography), consists of three sequential steps: the propagation of the mask illumination down through the absorber pattern, the reflection off the defective multilayer, and the propagation back up through the absorber. A propagated thin mask model is used to model the down/up propagation through the absorber pattern and a ray tracing simulator is used for the multilayer reflection. These simulators are linked together using a Fourier transform to convert the near field output of one component into a set of plane wave inputs for the next. This new method gives a 100x-300x speed increase compared to FDTD, and agrees to a point to point average of less than 2% with FDTD for 22nm lines on the wafer for NA=0.5. The errors in RADICAL and FDTD are examined to determine the sources of error for each simulator.

Paper Details

Date Published: 13 March 2007
PDF: 10 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170A (13 March 2007); doi: 10.1117/12.711173
Show Author Affiliations
Chris H. Clifford, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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