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Proceedings Paper

Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node
Author(s): Kazuyuki Yoshimochi; Takayuki Uchiyama; Takao Tamura; Thomas Theeuwes; Rudy Peeters; Hans van der Laan; Hans Bakker; Kenji Morisaki; Toshihiro Oga
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Paper Abstract

Here we present both simulation and experimental results that show the effect of changes in laser light source bandwidth (E95) on CD Iso-Dense Bias. For the 55nm Technology Node Device, we have shown that E95 stability of less than 0.11pm is required in order to maintain OPE variation to within 2nm. In addition, we also verified another method to adjust for OPE variations that occur when E95 fluctuates. The Contrast Adjustment method is an effective function to adjust for OPE variation due to E95 fluctuation; it has been shown to maintain OPE variation less than 1.5nm. Furthermore, for the 45nm Technology Node Device, we have demonstrated that E95 stability of less than 0.07pm is required to maintain OPE variation to within 1nm. The bandwidth performance of the latest laser light source exhibits E95 stability less than 0.03 pm, thereby showing that the OPE variation due to E95 can be kept to under 1nm.

Paper Details

Date Published: 26 March 2007
PDF: 11 pages
Proc. SPIE 6520, Optical Microlithography XX, 652011 (26 March 2007); doi: 10.1117/12.711052
Show Author Affiliations
Kazuyuki Yoshimochi, NEC Electronics Corp. (Japan)
Takayuki Uchiyama, NEC Electronics Corp. (Japan)
Takao Tamura, NEC Electronics Corp. (Japan)
Thomas Theeuwes, ASML Netherlands B.V. (Netherlands)
Rudy Peeters, ASML Netherlands B.V. (Netherlands)
Hans van der Laan, ASML Netherlands B.V. (Netherlands)
Hans Bakker, ASML Netherlands B.V. (Netherlands)
Kenji Morisaki, ASML Japan Co., Ltd. (Japan)
Toshihiro Oga, Cymer Japan, Inc. (Japan)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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