Share Email Print

Proceedings Paper

Illumination optimization with actual information of exposure tool and resist process
Author(s): Koichiro Tsujita; Koji Mikami; Ryotaro Naka; Norikazu Baba; Tomomi Ono; Akiyoshi Suzuki
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A solution tool to optimize exposure tool functions has been developed. Shown are examples of pattern matching, maximizing ED-window or NILS considering several patterns simultaneously, and so on. From these results, the following conclusions have been derived. Pattern matching whose accuracy less than 1nm can be attained flexibly by tuning illumination. Ideal illumination for hole patterns through pitches are shown and the results are sensitive to setting of exposure latitude of ED-window. Evaluation conditions such as evaluated locations and their numbers have impact on the optimization results. An optimized illumination of a device pattern varies according to k1 factor. And it is important to apply OPC during illumination optimization in case of optimizing several patterns. A model of resist simulation created by an exposure condition should be available for various exposure conditions during optimization. For this purpose an image log slope and a pattern curvature have strong impact among various characteristics of optical image.

Paper Details

Date Published: 26 March 2007
PDF: 12 pages
Proc. SPIE 6520, Optical Microlithography XX, 652036 (26 March 2007); doi: 10.1117/12.711048
Show Author Affiliations
Koichiro Tsujita, Canon Inc. (Japan)
Koji Mikami, Canon Inc. (Japan)
Ryotaro Naka, Canon Inc. (Japan)
Norikazu Baba, Canon Inc. (Japan)
Tomomi Ono, Canon Inc. (Japan)
Akiyoshi Suzuki, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

© SPIE. Terms of Use
Back to Top