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Proceedings Paper

A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots
Author(s): Xuejun Lu; Mark Meisner
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Paper Abstract

A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dot (QD) is proposed and analyzed. Enhanced nonlinear absorption is expected due to the long excited sate lifetime. Ultra-low leakage current has been verified. A High photodetectivity of > 1011cmHz1/2/W can be obtained at 180K. The two-photon sequential absorption photocurrent generation process is promising to achieve thermal-electrically cooled long-wave infrared (LWIR 8-12μm) photodetector with high photodetectivity.

Paper Details

Date Published: 6 February 2007
PDF: 8 pages
Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 64810K (6 February 2007); doi: 10.1117/12.711001
Show Author Affiliations
Xuejun Lu, Univ. of Massachusetts, Lowell (United States)
Mark Meisner, Raytheon Missile Systems (United States)


Published in SPIE Proceedings Vol. 6481:
Quantum Dots, Particles, and Nanoclusters IV
Kurt G. Eyink; Diana L. Huffaker; Frank Szmulowicz, Editor(s)

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